An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
闭锁效
手,提出了抑制闭锁一种新方法—伪闭锁路径法。
n. 互补金属氧化物半导体
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进了90nm甚至65nm及
下。
声明：
句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件
观点；若发现问题，欢迎向我们指正。
用户正在搜索
greenbug, greenbul, Greene, Greeneian, Greeneland, greener, greenery, green-eyed, greenfeed, greenfields,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁
手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进了90nm甚至65nm及以下。
声明：以
、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
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greenhouse effect, greenhouse gas, Greenian, greenie, greening, greenish, greenish yellow, greenism, greenkeeper, Greenland,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
效应入手,提出了抑制一种新方法—伪路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，
线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，
表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
greenmail, greenness, Greenock, greenockite, Greenough, greenoughite, greenovite, Greenpeace, green-pressing, greenroader,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭入手,提出了抑制闭一种新方法—伪闭路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
green-shaving, greensick, greensickness, greenskeeper, green-stain, greenster, greenstick fracture, greenstone, greenstuff, greensward,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 
属氧化物半导体
属氧化物半导体An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由联网资源自动生成，部分未经过
核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
Greenwich, Greenwich mean time, Greenwich meridian, Greenwich time, Greenwich Village, greenwing, greenwinged, greenwood, greeny, greenyard,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
用户正在搜索
Gregorian calendar, Gregorian chant, Gregorian telescope, gregorite, Gregory, greige, greinerite, greisen, greisenization, gremial,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
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gridder, gridding, grid-dipmeter, griddle, griddlecake, griddler, griddles, gride, grider, gridiron,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补
化物半导体
化物半导体An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未
工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
grievance, grievant, grieve, grieved, grievous, grievously, griff, griffe, Griffin, Griffith,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件效应入手,提出了抑制一种新方法—伪路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词
类均由互联网资源自动生成，部未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
grigri, grike, grill, grill room, grillage, grille, grilled, grilling, grillroom, grills,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一
法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽
0.13um 
入了90nm甚至65nm及以下。
声明：以上例句、词性分类均
互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
grimly, Grimm, Grimmiales, grimness, Grimsby, grimy, grin, grinch, grind, grind out,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,
抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入90nm甚至65nm及以
。
：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
grindingcone, grinding-in, grindingly, grindings, grindle, grindstone, grindstone-trough, gringo, grining, grinner,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,